Specifications may change in any manner without notice. Silicon npn epitaxail typefor audio frequency general purpose amplifier applications, 2sc1815 datasheet, 2sc1815 circuit, 2sc1815 data sheet. Ic cross reference cross reference ci stk cross reference ci tda cross reference ci sharp cross reference hitachi audio ic cross reference and circuit applications smd cross reference and equivalent we make every effort to ensure that the material on this site is accurate, however we do not warrant or represent that the information is free. Silicon npn epitaxail typefor audio frequency general purpose amplifier applications, c1815 datasheet, c1815 circuit, c1815 data sheet. Mcc micro commercial components tm omponents 20736 marilla street chatsworth. The central semiconductor 2sc1815 is a silicon npn transistor, manufactured by the epitaxial planar process, designed for general purpose amplifier. Symbol 1n4001 1n4002 1n4003 1n4004 1n4005 1n4006 1n4007 unit. A1015 datasheet, a1015 pdf, a1015 data sheet, datasheet, data sheet, pdf. General purpose plastic rectifier 1n4001 thru 1n4007 vishay general semiconductor features low forward voltage drop low leakage current high forward surge capability solder dip 275 c max. Datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. C1815 datasheet pdf 2 page list of unclassifed manufacturers. Applications general purpose switching and amplification, e.
Toshiba transistor silicon npn epitaxial type pct process 2sc1815 audio frequency general purpose. Oct 26, 2016 2sc1815 datasheet vceo50v, npn transistor toshiba, c1815 datasheet, 2sc1815 pdf, 2sc1815 pinout, 2sc1815 manual, 2sc1815 schematic, 2sc1815 equivalent. Toshiba transistor silicon npn epitaxial type pct process. Npn silicon transistor, 2sc1815 datasheet, 2sc1815 circuit, 2sc1815 data sheet. Apr 27, 2016 c5929 datasheet npn silicon transistor panasonic, c5929 pdf, c5929 pinout, c5929 equivalent, c5929 data, c5929 circuit, c5929 output, c5929 schematic. Rectron inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other. To92 plasticencapsulate transistors s9018 transistor npn features z high current gain bandwidth product maximum ratings t a25. Ordering information note 4 device packaging shipping. Select the part name and then you can download the datasheet in pdf format. Pinning pin description 1 base 2 collector 3 emitter. Preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a. Silicon npn epitaxail typefor audio frequency general purpose amplifier applications 2sc1815. C1815 datasheet pages hsmc npn epitaxial planar transistor. Low power bipolar transistors bc107 bc108 series page 240412 v1.
The central semiconductor 2sc1815 series are silicon npn transistors, manufactured by the epitaxial planar process, designed for general purpose. Silicon npn epitaxial type pct process, 2sc1815 datasheet, 2sc1815 circuit, 2sc1815 data sheet. The 2sc1815 is manufactured in a plastic to92 case. Audio frequency general purpose amplifier applications. Unit vcbo collectorbase voltage open emitter 2n2222. This transistor is further divided into four groups according to the dc current gain, o, y, g, and l and has 140, 240, 400 and 700 hfe dc current gain respectively. Posted on august 30, 2018 september 12, 2018 by diode. Glass and high temperature solder exemptions applied where applicable.
C5929 datasheet vcbo1550v, npn transistor panasonic. Npn general purpose transistor 2pc1815 features low current max. Transistor silicon pnp epitaxial type pct process audio frequency general purpose. O absolute maximum rating ta25c, unless otherwise specified parameter symbol ratings unit collectorbase voltage vcbo 60 v collectoremitter voltage vceo 50 v emitterbase voltage vebo 5 v collector current ic 150 ma base current ib 50 ma. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads. Vceo 50 v min, ic 150 ma max excellent hfe linearity. Characteristic symbol rating unit collectorbase voltage vcbo 60 v collectoremitter voltage vceo 50 v emitterbase voltage vebo 5 v pin. Amplifier transistors npn silicon maximum ratings rating symbol bc337 bc338 unit collectoremitter voltage vceo 45 25 vdc collectorbase voltage vcbo 50 30 vdc. Toshiba transistor silicon pnp epitaxial type pct process 2sa1015 audio frequency general purpose amplifier applications driver stage amplifier applications high voltage and high current.
Here is an image showing the pin diagram of the this transistor. St 2sc828 828a npn silicon epitaxial planar transistor for switching and af amplifier applications. Description npn transistor in a to92 sot54 plastic package. Bc337, amplifier transistors bc33716, bc33725, bc33740. This data sheet provides information on subminiature size, axial lead mounted. Semiconductor transistor, diode, ic cross reference. General purpose plastic rectifier vishay intertechnology. On special request, these transistors can be manufactured in different pin configurations. These transistors are subdivided into three groups q, r and s according to their dc current gain. Pinning pin description 1 emitter 2 base 3 collector, connected to case fig. It can also be used for the switching purpose just like other pnp transistors. When use as an audio frequency general purpose amplifier, can be operated in the active region. Toshiba transistor silicon pnp epitaxial type pct process. Audio frequency voltage amplifier applications low noise amplifier applications.